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MOCVD石墨盘

MOCVD石墨盘:MOCVD是指金属有机化合物化学气相沉淀。随着化合物半导体器件(GaAs MMIC 、InP MMIC以及GaN蓝光LED)市场的不断扩大,MOCVD系统的应用不断增长。在MOCVD反应设备外延涂层工艺中,MOCVD基座材料的性能对于涂层有着非常重要的影响。基座石墨材料选择和加工工艺,对…

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MOCVD石墨盘:MOCVD是指金属有机化合物化学气相沉淀。随着化合物半导体器件(GaAs MMIC InP MMIC以及GaN蓝光LED)市场的不断扩大,MOCVD系统的应用不断增长。

MOCVD反应设备外延涂层工艺中,MOCVD基座材料的性能对于涂层有着非常重要的影响。基座石墨材料选择和加工工艺,对于SIC涂层有紧密影响。包括材料的纯度、硬度、热膨胀系数和导热率,都是非常重要的因素。

With the development of the compound semiconductor such as GaAs MMIC, InP MMIC, and GaN blu-ray LED , the demand of MOCVD (Metal-organic Chemical Vapor Deposition )increased greatly. In the coating process of MOCVD equipment, the performance of MOCVD base material has a very important influence on the coating. The choice of graphite material and processing technology have a close influence on SiC coating. The purity, hardness, coefficient of thermal expansion and thermal conductivity of materials are very important factors.